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| Low Noise Amplifier 1.7 - 2.0 GHz Features q q q q q q q MAAM12032 SO-8 PIN 8 .1497-.1574 (3.80-4.00) -B.2284-.2440 (5.80-6.20) .010(0.25) M B M Low Noise Figure: 1.80 dB High Gain: 13 dB Low Power Consumption: 3 to 5 V, 5 mA High Dynamic Range DC Decoupled RF Input and Output No External RF Tuning Elements Necessary Low Cost SOIC 8 Plastic Package Orientation mark PIN 1 .1890-.1968 (4.80-5.00) -A- .0532-.0688 (1.35-1.75) 0-8 -C.0040-.0098 (0.10-0.25) .013-.020 TYP. (0.33-0.51) .0099-0.0196 x 45 Chamfer (0.25-0.50) Description M/A-COM's MAAM12032 is a high performance GaAs MMIC low noise amplifier in a low cost SOIC 8-lead surface mount plastic package. The MAAM12032 employs a fully monolithic design which eliminates the need for external tuning networks. It can be biased using 3- or 5-volt supplies and has an option for biasing at higher currents for increased dynamic range. The MAAM12032 is ideally suited for use where low noise figure, high gain, high dynamic range and low power consumption are required. Typical applications include receiver front ends in the Japanese Personal Handy Phone Service (PHS), Private Branch Exchange (PBX) and Personal Communications Systems and Networks (PCS, PCN) markets, as well as standard gain blocks, buffer amps, driver amps and IF amps in both fixed and portable systems. M/A-COM's MAAM12032 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. .004 (0.10) .016-.050 (0.40-1.27) .0075-0.0098 (0.19-0.25) .050(1.27) BSC. .010(0.25) M C A M B S 8- Lead SOP outline dimensions Narrow body .150 (All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions in ( ) are in mm. Unless Otherwise Noted: .xxx = - 0.010 (.xx = - 0.25) .xx = - 0.02 (.x = -0.5) Ordering Information Part Number MAAM12032 MAAM12032TR MAAM12032RTR MAAM12032SMB Package SOIC 8-Lead Plastic Forward Tape and Reel* Reverse Tape and Reel* Designer's Kit * If specific reel size is required, consult factory for part number assignment. Electrical Specifications1, TA = +25C, Z0 = 50, VDD = +5 V, PIN = -30 dBm, f = 1.7 - 2.0 GHz Parameter Gain Noise Figure Input VSWR Output VSWR Output 1 dB Compression Input IP3 Reverse Isolation Bias Current 1. See following pages for 3-volt data. Specifications Subject to Change Without Notice. V2.00 s Units dB dB Min. 10 Typ. 13 1.8 1.5:1 1.5:1 Max. 16 2.1 dBm dBm dB mA 3 2 0 30 5 7 M/A-COM, Inc. s 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266 Low Noise Amplifier MAAM12032 Absolute Maximum Ratings 1 Parameter VDD Input Power Current2 Channel Temperature3 Operating Temperature Storage Temperature Absolute Maximum +10 VDC +17 dBm 30 mA +150C -40C to +85C -65C to +150C Functional Diagram 500pF 15 nH VDD RF OUT GND 8 7 6 5 GND 1. Operation of this device outside these limits may cause permanent damage. 2. Only if pin #2 is used to increase current. (See note 6.) 3. Typical thermal resistance ( jc) = +165C/W. GND 1 2 3 4 GND Recommended PCB Configuration 0.020 (0.51) FR-4 Circuit Board Dimensions in inches (mm) RF IN See Note 6 VDD See Note 5 See Note 6 .025 (.64) 1 2 .294 (7.47) 0.100 (2.54) 8 7 6 RF Out 5 RF In 0.037 (0.94) 3 4 0.125 0.245 (3.18) (6.22) Notes: 4. Pins 1, 4, 5 and 8 must be RF and DC grounded as shown. 5. Pin 3 is the RF input; pin 6 is the RF output. VDD is applied on pin 7. This pin must be bypassed with a 500-pF surface mount MLC capacitor, mounted as close as possible to pin 7, and RF decoupled with a chip inductor having a minimum value of 15 nH (as shown in the Recommended PCB Configuration). 6. Pin 2 allows use of an external resistor to ground for optional, higher current bias. For nominal current operation no resistor is used. For optional 20-mA current operation, connect a 30- to 35-ohm chip resistor (as shown in the Recommended PCB Configuration). R .008 (0.20) (12 Places) Plated thru hole R .025 (0.64) (2 Places) Plated thru hole Typical Performance GAIN vs FREQUENCY, TA = +25C 17 15 NOISE FIGURE vs FREQUENCY, TA = +25C 2.0 NOISE FIGURE (dB) 5 V, 20 mA 5 V, 5 mA 3 V, 5 mA 1.9 1.8 1.7 1.6 5 V, 5 mA 5 V, 20 mA GAIN (dB) 13 11 9 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 3 V, 5 mA 1.70 1.75 1.80 1.85 1.90 1.95 2.00 FREQUENCY (GHz) FREQUENCY (GHz) Specifications Subject to Change Without Notice. V2.00 s M/A-COM, Inc. s 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266 Low Noise Amplifier MAAM12032 VSWR VS FREQUENCY @ 5 V, 5 mA, TA = +25C 3.0 6 INPUT IP3 vs FREQUENCY, TA = +25C 5 V, 20mA 5 V, 5 mA 2 0 -2 -4 3 V, 5 mA 1.70 1.75 1.80 1.85 1.90 1.95 2.00 INPUT IP3 (dBm) 2.2 2.5 4 Input Output VSWR 2.0 1.5 1.0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 FREQUENCY (GHz) FREQUENCY (GHz) GAIN vs FREQUENCY @ 5 V, 5 mA 17 15 13 11 9 1.5 +85C NOISE FIGURE vs FREQUENCY @ 5 V, 5 mA 2.5 NOISE FIGURE (dB) -40C +25C GAIN (dB) 2.2 1.9 +25C +85C -40C 1.6 1.3 1.6 1.7 1.8 1.9 2.0 2.1 2.2 1.70 1.75 1.80 1.85 1.90 1.95 2.00 FREQUENCY (GHz) FREQUENCY (GHz) Additional information is available in Application Note M540, "M/A-COM GaAs MMIC LNA SOIC-8 Platform." Specifications Subject to Change Without Notice. V2.00 s M/A-COM, Inc. s 1011 Pawtucket Boulevard, Lowell, MA 01853 USA Telephone: 800-366-2266 |
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